Silicon, Circuits, and the Digital Revolution

Concentration of Doping - Semiconductors into Metals

The resistivity of antimony-doped germanium as a function of 1/T for several impurity concentrations. [From H. J. Fritzche, J. Phys. Chem. Solids 6, 69 (1958), modified from Figure 28.2 in N. W. Ashcroft and N. D. Mermin, Solid State Physics, Holt, Rinehart, and Winston (1976).]

Specimen
 
  
1
2
5
7
8
10
12
15
17
18
20
21
22
23
24
25
26
27
29
Donor
concentration
x 1014 cm-3
5.3
9.3
16
23
30
52
85
130
240
350
450
550
640
740
840
1200
1300
2700
9500


SCEN103 Comments, suggestions, or requests to ghw@udel.edu.
"http://www.physics.udel.edu/~watson/scen103/colloq2000/ashcroft.html"
Last updated April 20, 2000.
© George Watson, Univ. of Delaware, 2000.