Exchange Bias in FM/AFM systems

We focus on the understanding of the mechanism by studying the so called "memory effect". We argue that the grain size distribution in AFM layer is the major reason for various physical behaviors in FM/AFM systems. By using different training procedures on spin valves (SV), we can study contributions from isolated grains, thus providing experimental evidence to support our argument.

Sample publication:
1. Y.F. Li and John Q. Xiao, "Memory effect in standard spin valve structures" J. Appl. Phys. 87: (9) 4951-4953 (2000)
2. Y. F. Li, R.H. Yu, John Q. Xiao, and D.V. Dimitrove, "Exchange bias and MR behavior in standard spin valves after novel thermal process", To appear J. Appl. Phys. (2000)